RF ICP Ion Sources

BeamTec presents the new RF ICP ion source by Kaufman & Robinson Inc.
With this new line KRI expands its product range for applications requiring higher ion energies. Typical applications include

  • Ion beam etching and milling
  • Ion beam assist deposition
  • Ion beam sputter deposition
  • Plasma surface modification and texturing
  • Direct deposition of thin and hard coatings

RF ICP Plasma Source

© KRI 2007

RF ICP Versions

 

RF ICP 20cm gridded ion beam source Features
  • Inductively coupled / RF discharge
  • Optlin self aligning ion optics
  • Filamentless
  • Gas compatibility with Ar, Kr, Xe, O2, N2, H2,others
  • Beam Type: collimated, convergent, divergent
  • Low ion energy option without grids

 
 
RFICP40
RFICP100
RFICP140
RFICP200
RFICP300
Ion Beam Current
>100mA
>350mA
>600mA
>800mA
>1500mA
Beam Voltage
100 - 1200 V
100 - 1200 V
100 - 1200 V
100 - 1200 V
100 - 1200 V
Beam Size @ grid
4cm Φ
10cm Φ
14cm Φ
20cm Φ
30cm Φ
Gas Flow
3-10 sccm
5-30 sccm
5-30 sccm
10-40 sccm
15-50 sccm
Diameter
5.3” (13.5cm)
7.52” (19.1cm)
9.7” (24.6cm)
16.1” (41cm)
20.9” (53cm)
Height
5.0” (12.7cm)
9.25” (23.5cm)
9.7” (24.6cm)
11.8” (30cm)
14” (35cm)